6.Explain the operation of TRAPATT diode. Explain plasma formation in TRAPATT diode. Good result from TRAPATT diodes below 10 GHz. Device op- erating principles, and their dependence upon material, impurity pro- file, structure, biasing, ana circuit loading are described. Chapter 5 Microwave Semiconductor Devices Microwave Transistors: It is a non linear device and its principle of operation is similar to that of low frequency device. Principle of operation :- A high field avalanche zone propagates through the diode and a)Carrier generation by impact ionization producing a current pulse of phase. If the potential systems applications of these devices are to be fully exploited, there is, therefore, a need for continued efforts towards the better understanding of the TRUE FALSE ⇒ Which of these are two state devices? After 3 clock pulses the contents of the shift register wil 0 101 1010 1110 The Trapatt diodes diameter ranges from as small as 50 µm for µw operation to 750 µm at lower frequency for high peak power device. During the operation of the diode a high field avalanche zone propagates through the depletion region and fills the layer with a dense plasma of electrons and holes which get trapped in the low field region behind the zone. It was first reported by Prager in 1967. Methods of device fabrication are discussed, and present state of the art is tabulated for oscillators and amplifiers on a power-frequency basis. Silicon Transistors are normally used for frequency range from UHF to S Band . 10.3.1 IMPATT Diode The device operates by injection of carrier into the drift region is called impact 45. 46. The Key phenomena are. TRAPATT devices operate at frequencies from 400 MHz to about 12GHz. IMPATT Diode. The Trapatt diodes diameter ranges from as small as 50 µm for µw o peration to 750 µm at lower frequency for high peak power device. Lamp Punched card Magnetic tape All of the above ⇒ In following figure, the initial contents of the 4-bit serial in parallel out, right shift, shift register as shown in figure are 0110. What are the applications of TRAPATT devices? TRAPATT diode – external circuit interaction involved in the operation of the device in a practical RF circuit. It operates efficiently below 10 GHz and need greater voltage swing for its operation. applications. It is used as active compnent in monolithic integrated circuit for high power applications. The device P+ region is kept as thin as possible at 2.5 to 7.5 µm. ⇒ IC 74181 is a 4 bit device. b)An additional phase shift introduced by the drift of carriers. Principle of operation : A high field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electron & holes that become trapped in low-field region behind the zone. delay of 90 degree. TRAPATT DIODE The TRAPATT (Trapped Plasma Avalanche Triggered Transit) diode is another microwave energy which is used as both amplifier and oscillator. Let us take a look at each of them, in detail. We shall discuss a few of transit time device such as the impact avalanche transit time device IMPATT diode, quantum-well injection transit time QWITT diode, and trapped plasma avalanche triggered transit TRAPATT diode here. This report describes the results of a study of the diode-circuit interactions in TRAPATT oscillators which use series connected diode chips to produce higher power outputs than could be obtained from a single chip. The devices that helps to make a diode exhibit this property are called as Avalanche transit time devices. 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